Photocarrier lifetime and transport in silicon supersaturated with sulfur

Deactivation of metastable single-crystal silicon hyperdoped with sulfur

Silicon supersaturated with sulfur by ion implantation and pulsed laser melting exhibits broadband optical absorption of photons with energies less than silicon’s band gap. However, this metastable, hyperdoped material loses its ability to absorb sub-band gap light after subsequent thermal treatment. We explore this deactivation process through optical absorption and electronic transport measur...

Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur

Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur. Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters.

Mobility - lifetime estimates in amorphous hydrogenated silicon ( a -

Estimates of the majority photocarrier mobility-lifetime (pt) product obtained from time-of-flight transient photoconductivity and from steady-state photo-conductivity are compared. It is shown that in principle both experiments measure the integral of the transient drift mobility; the demonstration is based solely on linear response theory and is independent of the specific microscopic transpo...

Estimations of Carrier Mobility and Trapped-Carrier Density of States for Macrocrystalline Silicon Semiconductors from Analysis of Field Dependent Steady-State Photocarrier Grating Measurements

The drift mobility for electrons and holes, small-signal mobility lifetime product, trapped-carrier density of states in addition to other correlated physical parameters of microcrystalline silicon sample are estimated from the analysis of fielddependent experimental data using steady-state photocarrier grating technique. The filed-dependent experimental data at room temperature of the sample w...

Effect of layer thickness on device response of silicon heavily supersaturated with sulfur